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| PD - 96088 IRF7343IPBF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 D1 D2 D2 N-Ch VDSS 55V P-Ch -55V 2 7 3 6 4 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. P-CHANNEL MOSFET RDS(on) 0.050 0.105 Top View SO-8 Absolute Maximum Ratings Parameter V DS ID @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C PD @TA = 70C EAS IAR EAR VGS dv/dt TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 55 4.7 3.8 38 2.0 1.3 72 4.7 0.20 20 5.0 -55 to + 150 -5.0 114 -3.4 P-Channel -55 -3.4 -2.7 -27 Units V A W W mJ A mJ V V/ns C Thermal Resistance RJA Maximum Junction-to-Ambient Parameter Typ. Max. 62.5 Units C/W www.irf.com 1 07/07/06 IRF7343IPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 55 -55 1.0 -1.0 7.9 3.3 Typ. Max. 0.059 0.054 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 2.0 -50 25 -250 100 24 36 26 38 2.3 3.4 3.0 4.5 7.0 10 8.4 13 8.3 12 14 22 3.2 4.8 10 15 32 48 43 64 13 20 22 32 740 690 190 210 71 86 Units V V/C V S A nA Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 4.7A VGS = 4.5V, ID = 3.8A VGS = -10V, ID = -3.4A VGS = -4.5V, ID = -2.7A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 10V, I D = 4.5A VDS = -10V, I D = -3.1A VDS = 55V, V GS = 0V VDS = -55V, VGS = 0V VDS = 55V, VGS = 0V, T J = 55C VDS = -55V, V GS = 0V, TJ = 55C VGS = 20V N-Channel I D = 4.5A, VDS = 44V, VGS = 10V P-Channel I D = -3.1A, V DS = -44V, VGS = -10V N-Channel VDD = 28V, ID = 1.0A, RG = 6.0, RD = 16 P-Channel VDD = -28V, ID = -1.0A, RG = 6.0, RD = 16 N-Channel V GS = 0V, V DS = 25V, = 1.0MHz P-Channel V GS = 0V, V DS = -25V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. 0.70 -0.80 60 54 120 85 Max. Units Conditions 2.0 -2.0 A 38 -27 1.2 TJ = 25C, IS = 2.0A, VGS = 0V V -1.2 TJ = 25C, IS = -2.0A, VGS = 0V 90 N-Channel ns 80 TJ = 25C, I F =2.0A, di/dt = 100A/s 170 nC P-Channel TJ = 25C, I F = -2.0A, di/dt = 100A/s 130 Repetitive rating; pulse width limited by Notes: Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) N-Channel ISD 4.7A, di/dt 220A/s, VDD V(BR)DSS, TJ 150C Surface mounted on FR-4 board, t 10sec. P-Channel ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4.7A. P-Channel Starting TJ = 25C, L = 20mH RG = 25, IAS = -3.4A. 2 www.irf.com N-Channel 100 IRF7343IPBF VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V BOTTOM 3.0V TOP 100 10 3.0V 3.0V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 ISD , Reverse Drain Current (A) 10 TJ = 150 C TJ = 25 C 1 1 3 4 V DS = 25V 20s PULSE WIDTH 5 6 0.1 0.2 0.5 0.8 VGS = 0 V 1.1 1.4 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7343IPBF 2.5 N-Channel RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 4.7A 2.0 R DS (on), Drain-to-Source On Resistance () 0.120 0.100 1.5 0.080 1.0 VGS = 4.5V 0.060 0.5 VGS = 10V 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.040 0 10 20 30 40 TJ , Junction Temperature ( C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.12 200 RDS(on) , Drain-to-Source On Resistance ( ) EAS , Single Pulse Avalanche Energy (mJ) TOP 160 BOTTOM ID 2.1A 3.8A 4.7A 0.10 120 0.08 80 I D = 4.7A 0.06 40 0.04 0 2 4 6 8 10 A 0 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 www.irf.com N-Channel 1200 IRF7343IPBF 20 1000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 C, Capacitance (pF) 800 Ciss 12 600 8 400 Coss 200 4 Crss 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7343IPBF 100 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP P-Channel 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP 10 10 -3.0V 1 -3.0V 1 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) TJ = 25 C TJ = 150 C 10 10 TJ = 150 C TJ = 25 C 1 1 3 4 5 V DS = -25V 20s PULSE WIDTH 6 7 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode Forward Voltage 6 www.irf.com P-Channel IRF7343IPBF 2.0 1.5 R DS (on), Drain-to-Source On Resistance() RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -3.4 A 0.240 0.200 VGS = -4.5V 0.160 1.0 0.5 0.120 VGS = -10V 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 0.080 0 2 4 6 8 10 12 TJ , Junction Temperature ( C) -ID , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current 0.45 EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to-Source On Resistance ( ) 300 250 ID -1.5A -2.7A BOTTOM -3.4A TOP 0.35 200 0.25 150 I D = -3.4 A 0.15 100 50 0.05 2 5 8 11 14 A 0 25 50 75 100 125 150 -V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( C) Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current www.irf.com 7 IRF7343IPBF 1200 P-Channel 20 960 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd ID = -3.1A 16 VDS =-48V VDS =-30V VDS =-12V C, Capacitance (pF) 720 Ciss 12 480 8 Coss 240 4 Crss 0 1 10 100 0 0 10 20 30 40 --VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 PDM 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7343IPBF SO-8 Package Outline Dimensions are shown in milimeters (inches) 9DH 6 6 i p 9 @ r r C F G DI8C@T HDI H6Y $"! %'' # (' " ! &$ (' '( (%' #(& $&# $AA76TD8 !$AA76TD8 !!'# !## (( (% % $ A A' HDGGDH@U@ST HDI H6Y "$ &$ !$ "" $ ( !$ #' $ "' # !&AA76TD8 %"$AA76TD8 $' %! !$ $ # !& A' A 9 6 ' & % $ 7 % @ $ C !$Ab dA 6 ! " # %Y r r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 APPUQSDIU IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking Information @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) www.irf.com 9 IRF7343IPBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2006 10 www.irf.com |
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